Methodology for modeling and implementation of RF power amplifiers

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dc.contributor.authorRafael Valdivia, Guillermo
dc.contributor.authorRuelas Galdós, Hernán
dc.contributor.authorSalinas Roque, Ricardo
dc.date.accessioned2019-01-29T22:19:51Z
dc.date.available2019-01-29T22:19:51Z
dc.date.issued2017
dc.description.abstractA new methodology for modeling and implementation of RF power amplifiers is shown. Starting from pulsed measurements, we demonstrated that we can predict small and large signal performances considering frequency dispersion effects, for different semiconductor technologies. © 2016 IEEE.es_PE
dc.description.uriTrabajo de investigaciónes_PE
dc.identifier.doihttps://doi.org/10.1109/LAMC.2016.7851281es_PE
dc.identifier.isbnurn:isbn:9781509042876es_PE
dc.identifier.urihttps://hdl.handle.net/20.500.12590/15791
dc.language.isoenges_PE
dc.publisherInstitute of Electrical and Electronics Engineers Inc.es_PE
dc.relation.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85015828013&doi=10.1109%2fLAMC.2016.7851281&partnerID=40&md5=d30b4ea282a8664aa71c20a503e33b93es_PE
dc.rightsinfo:eu-repo/semantics/restrictedAccesses_PE
dc.sourceRepositorio Institucional - UCSPes_PE
dc.sourceUniversidad Católica San Pabloes_PE
dc.sourceScopuses_PE
dc.subjectMicrowave deviceses_PE
dc.subjectPower amplifierses_PE
dc.subjectSemiconductor device manufacturees_PE
dc.subjectFrequency dispersion effectes_PE
dc.subjectLarge-signal performancees_PE
dc.subjectLevel modeles_PE
dc.subjectMicrowave transistorses_PE
dc.subjectPulsed measurementses_PE
dc.subjectRF power amplifierses_PE
dc.subjectSemiconductor technologyes_PE
dc.subjectTrapping effectses_PE
dc.subjectRadio frequency amplifierses_PE
dc.subject.ocdehttps://purl.org/pe-repo/ocde/ford#2.02.01es_PE
dc.titleMethodology for modeling and implementation of RF power amplifierses_PE
dc.typeinfo:eu-repo/semantics/conferenceObject
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