Methodology for modeling and implementation of RF power amplifiers

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Date
2017
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
A new methodology for modeling and implementation of RF power amplifiers is shown. Starting from pulsed measurements, we demonstrated that we can predict small and large signal performances considering frequency dispersion effects, for different semiconductor technologies. © 2016 IEEE.
Description
Keywords
Microwave devices , Power amplifiers , Semiconductor device manufacture , Frequency dispersion effect , Large-signal performance , Level model , Microwave transistors , Pulsed measurements , RF power amplifiers , Semiconductor technology , Trapping effects , Radio frequency amplifiers
Citation
URI
https://hdl.handle.net/20.500.12590/15791
Collections
Artículos - Ingeniería Electrónica y de Telecomunicaciones