Browsing by Author "Rafael Valdivia, Guillermo"

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    Analysis of sound propagation for outdoor emergency speakers networks
    (Institute of Electrical and Electronics Engineers Inc., 2017) Rosas Bermejo, Esther; Rafael Valdivia, Guillermo; Paucar Curasma, Ronald
    In this work we show the results of analysis of propagation of sound waves applied for an alert system in the river Chili, in Arequipa city. We used mathematical models, ISO standards, geographical, demographical and environmental variables of Arequipa. A complete mathematical model has been implemented in Matlab. It was compared with results generated by several commercial software, showing good coherence. As result of this paper, we propose a new methodology for the design of a network of emergency speakers for alert systems, assuring coverage and reliability. © 2016 IEEE.
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    Methodology for modeling and implementation of RF power amplifiers
    (Institute of Electrical and Electronics Engineers Inc., 2017) Rafael Valdivia, Guillermo; Ruelas Galdós, Hernán; Salinas Roque, Ricardo
    A new methodology for modeling and implementation of RF power amplifiers is shown. Starting from pulsed measurements, we demonstrated that we can predict small and large signal performances considering frequency dispersion effects, for different semiconductor technologies. © 2016 IEEE.
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    Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
    (Institute of Electrical and Electronics Engineers Inc., 2014) Rafael Valdivia, Guillermo; Su, Zhiguo; Urquizo, Anthony; Mendoza, Thalia
    A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions. © 2014 IEEE.
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    Nonlinear device model for GaN and GaAs microwave transistors including memory effects
    (Institute of Electrical and Electronics Engineers Inc., 2015) Rafael Valdivia, Guillermo; Urquizo, Anthony; Mendoza, Thalia; Barbin, Silvio
    In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique can model one of the most critical phenomena in telecommunications, frequency dispersion effects which is related to memory effects. Results of measurements reveal the accuracy of this technique under small-signal and large-signal conditions. The proposed technique can be embedded into other models to improve its capabilities using only one current source in a new large signal equivalent circuit. © 2015 IEEE.