Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
dc.contributor.author | Rafael Valdivia, Guillermo | |
dc.contributor.author | Su, Zhiguo | |
dc.contributor.author | Urquizo, Anthony | |
dc.contributor.author | Mendoza, Thalia | |
dc.date.accessioned | 2019-01-29T22:19:54Z | |
dc.date.available | 2019-01-29T22:19:54Z | |
dc.date.issued | 2014 | |
dc.description.abstract | A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions. © 2014 IEEE. | es_PE |
dc.description.uri | Trabajo de investigación | es_PE |
dc.identifier.doi | https://doi.org/10.1109/LATINCOM.2014.7041886 | es_PE |
dc.identifier.isbn | urn:isbn:9781479971626 | es_PE |
dc.identifier.uri | https://hdl.handle.net/20.500.12590/15862 | |
dc.language.iso | eng | es_PE |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | es_PE |
dc.relation.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946688468&doi=10.1109%2fLATINCOM.2014.7041886&partnerID=40&md5=5e5e5ac66f8967868b8ff62a8f5cf4e4 | es_PE |
dc.rights | info:eu-repo/semantics/restrictedAccess | es_PE |
dc.source | Repositorio Institucional - UCSP | es_PE |
dc.source | Universidad Católica San Pablo | es_PE |
dc.source | Scopus | es_PE |
dc.subject | Convolutional codes | es_PE |
dc.subject | Dispersions | es_PE |
dc.subject | Gallium arsenide | es_PE |
dc.subject | Gallium nitride | es_PE |
dc.subject | Microwave devices | es_PE |
dc.subject | Scattering parameters | es_PE |
dc.subject | Circuit modeling | es_PE |
dc.subject | FETs | es_PE |
dc.subject | Frequency dispersion | es_PE |
dc.subject | Frequency dispersion effect | es_PE |
dc.subject | Large-signal conditions | es_PE |
dc.subject | Memory effects | es_PE |
dc.subject | Pulsed measurements | es_PE |
dc.subject | Wide-band communications | es_PE |
dc.subject | Semiconducting gallium | es_PE |
dc.subject.ocde | https://purl.org/pe-repo/ocde/ford#2.02.01 | es_PE |
dc.title | Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication | es_PE |
dc.type | info:eu-repo/semantics/conferenceObject |