Nonlinear device model for GaN and GaAs microwave transistors including memory effects

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dc.contributor.authorRafael Valdivia, Guillermo
dc.contributor.authorUrquizo, Anthony
dc.contributor.authorMendoza, Thalia
dc.contributor.authorBarbin, Silvio
dc.date.accessioned2019-01-29T22:19:54Z
dc.date.available2019-01-29T22:19:54Z
dc.date.issued2015
dc.description.abstractIn this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique can model one of the most critical phenomena in telecommunications, frequency dispersion effects which is related to memory effects. Results of measurements reveal the accuracy of this technique under small-signal and large-signal conditions. The proposed technique can be embedded into other models to improve its capabilities using only one current source in a new large signal equivalent circuit. © 2015 IEEE.es_PE
dc.description.uriTrabajo de investigaciónes_PE
dc.identifier.doihttps://doi.org/10.1109/IMOC.2015.7369094es_PE
dc.identifier.isbnurn:isbn:9781467394925es_PE
dc.identifier.urihttps://hdl.handle.net/20.500.12590/15850
dc.language.isoenges_PE
dc.publisherInstitute of Electrical and Electronics Engineers Inc.es_PE
dc.relation.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84964497106&doi=10.1109%2fIMOC.2015.7369094&partnerID=40&md5=3c767dd7a352c392e719bd25a5c68530es_PE
dc.rightsinfo:eu-repo/semantics/restrictedAccesses_PE
dc.sourceRepositorio Institucional - UCSPes_PE
dc.sourceUniversidad Católica San Pabloes_PE
dc.sourceScopuses_PE
dc.subjectEquivalent circuitses_PE
dc.subjectGallium arsenidees_PE
dc.subjectGallium nitridees_PE
dc.subjectHeterojunction bipolar transistorses_PE
dc.subjectMicrowave deviceses_PE
dc.subjectModelses_PE
dc.subjectOptoelectronic deviceses_PE
dc.subjectScattering parameterses_PE
dc.subjectSemiconducting galliumes_PE
dc.subjectFrequency dispersion effectes_PE
dc.subjectGaAses_PE
dc.subjectLarge-signal conditionses_PE
dc.subjectLarge-signal equivalent circuites_PE
dc.subjectMemory effectses_PE
dc.subjectMicrowave transistorses_PE
dc.subjectNonlinear device modelinges_PE
dc.subjectPulsed measurementses_PE
dc.subjectMicrowaveses_PE
dc.subject.ocdehttps://purl.org/pe-repo/ocde/ford#2.02.01es_PE
dc.titleNonlinear device model for GaN and GaAs microwave transistors including memory effectses_PE
dc.typeinfo:eu-repo/semantics/conferenceObject
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