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  1. Home
  2. Browse by Author

Browsing by Author "Mendoza, Thalia"

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    Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
    (Institute of Electrical and Electronics Engineers Inc., 2014) Rafael Valdivia, Guillermo; Su, Zhiguo; Urquizo, Anthony; Mendoza, Thalia
    A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions. © 2014 IEEE.
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    Nonlinear device model for GaN and GaAs microwave transistors including memory effects
    (Institute of Electrical and Electronics Engineers Inc., 2015) Rafael Valdivia, Guillermo; Urquizo, Anthony; Mendoza, Thalia; Barbin, Silvio
    In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique can model one of the most critical phenomena in telecommunications, frequency dispersion effects which is related to memory effects. Results of measurements reveal the accuracy of this technique under small-signal and large-signal conditions. The proposed technique can be embedded into other models to improve its capabilities using only one current source in a new large signal equivalent circuit. © 2015 IEEE.
Contacto
Jorge Luis Román Yauri
Correo
jroman@ucsp.edu.pe
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